tsdf52424x/TSDF52424XR vishay semiconductors 1 (4) www.vishay.com document number 85077 rev. 2, 12nov01 dual - mosmic ? two agc amplifiers for tvtuner prestage with 5 v supply voltage mosmic - mos m onolithic i ntegrated c ircuit electrostatic sensitive device. observe precautions for handling. applications low noise gain controlled input stages in uhf-and vhf- tuners with 5 v supply voltage. typical application amp1 amp2 g1 1 g1 6 agc rf in rf in c c d 3 g2 (common) 2 (tsdf52424x) 5 (TSDF52424XR) s (common) c rfc rf out +5 v d 4 c rfc rf out 16761 +5 v c 5 (tsdf52424x) 2 (TSDF52424XR) features two agc amplifiers in a single package integrated gate protection diodes low noise figure high gain, medium forward transadmittance (24 ms typ.) biasing network on chip improved cross modulation at gain reduction high agc-range with less steep slope smd package, reverse pinning possible ty cw wc2 123 654 16762 tsdf52424x marking: wc2 plastic case (sot 363) 1 = gate 1 (amplifier 1), 2 = gate 2, 3 = drain (amplifier 1), 4 = drain (amplifier 2), 5 = source, 6 = gate1 (amplifier 2) ty cw w2c 123 654 16763 TSDF52424XR marking: w2c plastic case (sot 363) 1 = gate 1 (amplifier 1), 2 = source, 3 = drain (amplifier 1), 4 = drain (amplifier 2), 5 = gate2, 6 = gate1 (amplifier 2) t = telefunken y = year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001) cw = calendar week, is variable for number from 01 to 52 number of calendar week is always indicating place of pin 1
tsdf52424x/TSDF52424XR vishay semiconductors www.vishay.com 2 (4) rev. 2, 12nov01 document number 85077 all of following data and characteristics are valid for operating either amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5) absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit drain - source voltage v ds 8 v drain current i d 25 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma gate 1/gate 2 - source voltage v g1/g2sm 6 v total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg 55 to +150 c maximum thermal resistance t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit channel ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m m cu r thcha 450 k/w electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min. typ. max. unit gate 1 - source breakdown voltage i g1s = 10 ma, v g2s = v ds = 0 v (br)g1ss 7 10 v gate 1 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 7 10 v gate 1 - source +v g1s = 5 v, v g2s = v ds = 0 +i g1ss 50 m a gate 1 source leakage current v g1s = 5 v, v g2s = v ds = 0 i g1ss 100 m a gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 20 na drain current v ds = 5 v, v g1s = 0, v g2s = 4 v i dss 50 250 m a self-biased operating current v ds = 5 v, v g1s = nc, v g2s = 4 v i dsp 8 13 18 ma gate 2 - source cut-off voltage v ds = 5 v, v g1s = nc, i d = 20 m a v g2s(off) 0.8 1.0 1.4 v
tsdf52424x/TSDF52424XR vishay semiconductors 3 (4) www.vishay.com document number 85077 rev. 2, 12nov01 electrical ac characteristics v ds = 5 v, v g2s = 4 v, i d = i dsp , f = 1 mhz, t amb = 25 c, unless otherwise specified parameter test conditions symbol min. typ. max. unit forward transadmittance ? y 21s ? 20 24 28 ms gate 1 input capacitance c issg1 1.7 2.1 pf feedback capacitance c rss 15 30 ff output capacitance c oss 0.9 pf power gain g s = 2 ms, g l = 0.5 ms, f = 200 mhz g ps 26 db power gain g s = 3,3 ms, g l = 1 ms, f = 800 mhz g ps 16.5 21 db agc range v ds = 5 v, v g2s = 1 to 4 v, f = 800 mhz d g ps 45 db noise figure g s = 2 ms, g l = 0.5 ms, f = 200 mhz f 1 db noise figure g s = 3.3 ms, g l = 1 ms, f = 800 mhz f 1.3 db cross modulation input level for k = 1 % @ 0 db agc f w = 50 mhz, f unw = 60 mhz x mod 90 db m v input level for k = 1 % @ 40 db agc f w = 50 mhz, f unw = 60 mhz x mod 100 105 db m v dimensions of tsdf52424x/TSDF52424XR in mm 14280
tsdf52424x/TSDF52424XR vishay semiconductors www.vishay.com 4 (4) rev. 2, 12nov01 document number 85077 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substanc es. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
|
